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Volumn 519, Issue 10, 2011, Pages 3119-3122

Interfacial electronic structures between fullerene and calcium for high performance n-type organic semiconducting devices

(2) Yi, Yeonjin a Kang, Seong Jun b

a Korea Research Institute of Standards and Science (South Korea)

b Kyung Hee University (South Korea)

Author keywords

Calcium; Electronic structure; Fullerene; Organic semiconductors; Ultraviolet photoelectron spectroscopy

Indexed keywords

BANDBENDING; ELECTRON-INJECTION BARRIER; ENERGY LEVEL ALIGNMENT; ENERGY LEVEL DIAGRAMS; GAP STATE; HIGHEST OCCUPIED MOLECULAR ORBITAL; IN-SITU; INTERFACE DIPOLE; INTERFACE REGIONS; INTERFACIAL ELECTRONIC STRUCTURE; ORGANIC SEMICONDUCTOR; STEP-BY-STEP; VACUUM LEVEL;

DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; FULLERENES; MOLECULAR ORBITALS; PHASE INTERFACES; PHOTOELECTRICITY; PHOTONS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; VACUUM;

CALCIUM;

EID: 79952313890 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.010 Document Type: Article

Times cited : (5)

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