C60 thin-film transistors with low work-function metal electrodes

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2396-2398

  Chikamatsu, Masayuki ^a   Nagamatsu, Shuichi ^a   Taima, Tetsuya ^a   Yoshida, Yuji ^a   Sakai, Natsuko ^a   Yokokawa, Harumi ^a   Saito, Kazuhiro ^a   Yase, Kiyoshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRODES; ELECTRON MOBILITY; FULLERENES; MAGNESIUM PRINTING PLATES; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING; SILICA; SILVER;

DOPING EFFECT; DRAIN CURRENT; DRAIN ELECTRODES; ORGANIC THIN-FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 7044264528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1796530     Document Type: Article

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