Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 3, 2011, Pages 89-91

  Biju, Kuyyadi P ^a   Liu, Xinjun ^a   Kim, Seonghyun ^a   Jung, Seungjae ^a   Park, Jubong ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Filamentary switching; Graded WOx; Homogeneous switching; Resistive switching; Switching polarity

Indexed keywords

COUNTER-CLOCKWISE; ELECTRICAL CHARACTERISTIC; FILAMENTARY SWITCHING; GRADED WOX; HIGH TEMPERATURE; HOMOGENEOUS SWITCHING; MEMORY CELL; MEMORY PERFORMANCE; RESISTIVE SWITCHING; REVERSIBLE EFFECTS; SWITCHING MODES; THERMAL OXIDATION;

SEMICONDUCTOR STORAGE; SWITCHING SYSTEMS; THERMAL EXPANSION;

SWITCHING;

EID: 79952217793     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004455     Document Type: Letter

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