I-V characteristics of ZnO/Cu2O thin film n-i-p heterojunction

Physica B: Condensed Matter

Volumn 406, Issue 6-7, 2011, Pages 1253-1257

  Lv, Peiwei ^a   Zheng, Weifeng ^a   Lin, Limei ^a   Peng, Fuchuan ^a   Huang, Zhigao ^a   Lai, Fachun ^a  

^a FUJIAN NORMAL UNIVERSITY   (China)

Author keywords

Cu2O; Heterojunction; Thin films; ZnO

Indexed keywords

CU2O; CURRENT VOLTAGE; ELECTRICAL PROPERTY; ENERGY-BAND DIAGRAM; FORWARD BIAS; GLASS SUBSTRATES; I-ZNO LAYER THICKNESS; IDEALITY FACTORS; IV CHARACTERISTICS; MEAN-GRAIN SIZE; OPTICAL BAND GAP ENERGY; ORDERS OF MAGNITUDE; P-TYPE; RECTIFYING BEHAVIORS; VAN DER PAUW METHOD; XRD; ZNO; ZNO FILMS;

CARRIER CONCENTRATION; COPPER; DISTILLATION; ELECTRIC PROPERTIES; HETEROJUNCTIONS; METALLIC FILMS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

OPTICAL FILMS;

EID: 79952195130     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.01.010     Document Type: Article

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