Effects of annealing temperature on the resistance switching behavior of CaCu3Ti4O12 films

Thin Solid Films

Volumn 517, Issue 3, 2008, Pages 1209-1213

  Shen, Yu Shu ^a   Chiou, Bi Shiou ^a   Ho, Chia Cheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

CaCu3Ti4O12 (CCTO); Resistance random access memory; Sol gel

Indexed keywords

ANNEALING; COLLOIDS; DATA STORAGE EQUIPMENT; GELATION; GELS; MICROSTRUCTURE; RANDOM ACCESS STORAGE; SOL-GEL PROCESS; SOL-GELS; SOLS;

ANNEALING TEMPERATURES; CACU3TI4O12 (CCTO); CRYSTALLINITY; FILM MICROSTRUCTURES; HIGH RESISTANCES; LOW RESISTANCES; NOVEL MATERIALS; RESISTANCE RANDOM ACCESS MEMORIES; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE RATIOS; RESISTANCE SWITCHING; SOL-GEL; SOL-GEL METHODS; SWITCHING CYCLES;

CALCIUM ALLOYS;

EID: 56649092918     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.06.034     Document Type: Article

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