The mechanism of enhanced diffusion of phosphorus in silicon during rapid photothermal processing of solar cells

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 776-781

  Shishiyanu, Sergiu ^a   Singh, Rajendra ^b   Shishiyanu, Teodor ^a   Asher, Sally ^c   Reedy, Robert ^c  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^b AMRL   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Diffusion coefficient; enhanced diffusion; quantum energy; rapid photothermal processing (RPP)

Indexed keywords

DIFFUSION COEFFICIENTS; ELECTRON SYSTEMS; ENERGY CONTRIBUTION; ENHANCED DIFFUSION; IMPURITY PROFILE; PHOSPHORUS DIFFUSION; QUANTUM ENERGY; RAPID PHOTOTHERMAL PROCESSING; SOURCE OF ENERGY; THERMAL FACTORS; THERMAL PROCESS; VACUUM ULTRAVIOLETS;

ACTIVATION ENERGY; MULTIPHOTON PROCESSES; PHOSPHORUS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

DIFFUSION;

EID: 79952039867     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2096511     Document Type: Article

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