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Volumn 36, Issue 5, 2002, Pages 581-587

Shallow p-n junctions formed in silicon using pulsed photon annealing

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[No Author keywords available]

Indexed keywords


EID: 0036588550     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1478552     Document Type: Article
Times cited : (34)

References (26)
  • 6
    • 38349080134 scopus 로고    scopus 로고
    • Semiconductors 32, 124 (1998)
    • A.A. Andronov, N.T. Bagraev, D.K. Klyachkin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33 (1), 58 (1999) [Semiconductors 33, 51 (1999)]; Fiz. Tekh. Poluprovodn. (St. Petersburg) 32 (2), 137 (1998) [Semiconductors 32, 124 (1998)].
    • (1998) Fiz. Tekh. Poluprovodn. (St. Petersburg) , vol.32 , Issue.2 , pp. 137


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.