RTP diffusion and junction formation in Si and GaAs

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 199-204

  Shishiyanu, Sergiu ^a  

^a MD 2004   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALS; DIFFUSION; ELECTRIC CONDUCTIVITY; FURNACES; GALLIUM ALLOYS; INTERNET PROTOCOLS; QUANTUM ELECTRONICS; QUANTUM THEORY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; ZINC;

CONVENTIONAL FURNACE ANNEALING; CONVENTIONAL FURNACES; DIFFUSION COEFFICIENTS; DIFFUSION MECHANISMS; DIFFUSION TIMES; ENHANCED DIFFUSIONS; EXPERIMENTAL CONCENTRATIONS; JUNCTION FORMATIONS; P-N JUNCTIONS; QUANTUM EFFECTS;

RAPID THERMAL ANNEALING;

EID: 48349128807     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2006.368000     Document Type: Conference Paper

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