Direct fabrication of high-aspect ratio anodic aluminum oxide with continuous pores on conductive glass

Journal of the Electrochemical Society

Volumn 158, Issue 1, 2011, Pages

  Hill, Justin J ^a   Haller, Kelly ^a   Ziegler, Kirk J ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DEPOSITION; ALUMINUM FILM; ANODIC ALUMINUM OXIDE; ANODIZATION PROCESS; ANODIZATIONS; CONDUCTIVE GLASS; CURRENT RESPONSE; GOLD NANOWIRE; HIGH-ASPECT RATIO; IN-SITU; ITO/GLASS SUBSTRATES; LENGTH TO DIAMETER RATIO; METAL INTERLAYERS; PORE FORMATION; POTENTIAL APPLICATIONS; SINGLE-STEP; TIME-RESOLVED; TIN DOPED INDIUM OXIDE; TITANIUM INTERLAYER;

ADHESION; ALUMINUM; ASPECT RATIO; CHROMIUM; COMPOSITE FILMS; FABRICATION; GOLD DEPOSITS; NANOWIRES; OXIDES; PHOSPHORIC ACID; PORE SIZE; SULFURIC ACID; TIN; TITANIUM;

ALUMINUM COATINGS;

EID: 79951969362     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3506007     Document Type: Article

References (53)

1. O. Jessensky, F. Muller, and U. Gosele, Appl. Phys. Lett. APPLAB 0003-6951, 72, 1173 (1998). 10.1063/1.121004 (Pubitemid 128677832)
2. A. P. Li, F. Muller, A. Birner, K. Nielsch, and U. Gosele, J. Appl. Phys. JAPIAU 0021-8979, 84, 6023 (1998). 10.1063/1.368911
3. H. Masuda, H. Asoh, M. Watanabe, K. Nishio, M. Nakao, and T. Tamamura, Adv. Mater. ADVMEW 0935-9648, 13, 189 (2001). 10.1002/1521-4095(200102)13: 3<189::AID-ADMA189>3.0.CO;2-Z
4. H. Masuda, H. Yamada, M. Satoh, H. Asoh, M. Nakao, and T. Tamamura, Appl. Phys. Lett. APPLAB 0003-6951, 71, 2770 (1997). 10.1063/1.120128
5. Jp Osulliva and G. C. Wood, Proc. R. Soc. London, Ser. A PRLAAZ 0950-1207, 317, 511 (1970). 10.1098/rspa.1970.0129
6. V. P. Parkhutik and V. I. Shershulsky, J. Phys. D JPAPBE 0022-3727, 25, 1258 (1992). 10.1088/0022-3727/25/8/017
7. H. B. Xu, H. Z. Chen, W. J. Xu, and M. Wang, Chem. Phys. Lett. CHPLBC 0009-2614, 412, 294 (2005). 10.1016/j.cplett.2005.07.006
8. P. Stair, C. Marshall, G. Xiong, H. Feng, M. Pellin, J. Elam, L. Curtiss, L. Iton, H. Kung, M. Kung, Top. Catal. TOCAFI 1022-5528, 39, 181 (2006). 10.1007/s11244-006-0055-0
9. S. A. Bagshaw, E. Prouzet, and T. J. Pinnavaia, Science SCIEAS 0036-8075, 269, 1242 (1995). 10.1126/science.269.5228.1242
10. L. K. Teh, V. Furin, A. Martucci, M. Guglielmi, C. C. Wong, and F. Romanato, Thin Solid Films THSFAP 0040-6090, 515, 5787 (2007). 10.1016/j.tsf.2006.12.166 (Pubitemid 46635646)
11. G. E. Moore, Electronics ELECAD 0013-5070, 38, 114 (1965).
12. J. J. Hill, S. P. Cotton, and K. J. Ziegler, Chem. Mater. CMATEX 0897-4756, 21, 1841 (2009). 10.1021/cm803083s
13. S. Z. Chu, S. Inoue, K. Wada, D. Li, H. Haneda, and S. Awatsu, J. Phys. Chem. B JPCBFK 1089-5647, 107, 6586 (2003). 10.1021/jp0349684
14. G. Z. Cao, J. Phys. Chem. B JPCBFK 1089-5647, 108, 19921 (2004). 10.1021/jp040492s (Pubitemid 40073505)
15. Y. Ishikawa and Y. Matsumoto, Sol. Stat. Ion., 151, 213 (2002). 10.1016/S0167-2738(02)00712-9 (Pubitemid 35411716)
16. Y. Liang, C. Zhen, D. Zou, and D. Xu, J. Am. Chem. Soc. JACSAT 0002-7863, 126, 16338 (2004). 10.1021/ja044545v (Pubitemid 40081928)
17. S. J. Limmer, T. P. Chou, and G. Z. Cao, J. Mater. Sci. JMTSAS 0022-2461, 39, 895 (2004). 10.1023/B:JMSC.0000012919.21763.b2
18. S. J. Limmer, S. Seraji, Y. Wu, T. P. Chou, C. Nguyen, and G. Z. Cao, Adv. Funct. Mater. AFMDC6 1616-301X, 12, 59 (2002). 10.1002/1616-3028(20020101) 12:1<59::AID-ADFM59>3.0.CO;2-B
19. Y. L. Qingmin Zhang, Xu. Dongsheng, and Gu. Zhennan, J. Mater. Sci. Lett. JMSLD5 0261-8028, 20, 925 (2001). 10.1023/A:1010984917974 (Pubitemid 32698779)
20. G. Xomeritakis, N. G. Liu, Z. Chen, Y. B. Jiang, R. Kohn, P. E. Johnson, C. Y. Tsai, P. B. Shah, S. Khalil, S. Singh, J. Membr. Sci. JMESDO 0376-7388, 287, 157 (2007). 10.1016/j.memsci.2006.10.039 (Pubitemid 44920284)
21. K. J. Ziegler, B. Polyakov, J. S. Kulkarni, T. A. Crowley, K. M. Ryan, M. A. Morris, D. Erts, and J. D. Holmes, J. Mater. Chem. JMACEP 0959-9428, 14, 585 (2004). 10.1039/b311585b
22. Y. Wu, G. Cheng, K. Katsov, S. W. Sides, J. Y. Wang, J. Tang, G. H. Fredrickson, M. Moskovits, and G. D. Stucky, Nature Mater. NMAACR 1476-1122, 3, 816 (2004). 10.1038/nmat1230
23. A. B. F. Martinson, J. W. Elam, J. T. Hupp, and M. J. Pellin, Nano Lett. NALEFD 1530-6984, 7, 2183 (2007). 10.1021/nl070160+ (Pubitemid 47310103)
24. T. R. Kline, M. Tian, J. Wang, A. Sen, M. W. H. Chan, and T. E. Mallouk, Inorg. Chem. INOCAJ 0020-1669, 45, 7555 (2006). 10.1021/ic0601384
25. M. Lahav, E. A. Weiss, Q. Xu, and G. M. Whitesides, Nano Lett. NALEFD 1530-6984, 6, 2166 (2006). 10.1021/nl061786n (Pubitemid 44555273)
26. Z. Miao, D. S. Xu, J. H. Ouyang, G. L. Guo, X. S. Zhao, and Y. Q. Tang, Nano Lett. NALEFD 1530-6984, 2, 717 (2002). 10.1021/nl025541w (Pubitemid 135706419)
27. Y. Yang, H. Chen, Y. Mei, J. Chen, X. Wu, and X. Bao, Solid State Commun. SSCOA4 0038-1098, 123, 279 (2002). 10.1016/S0038-1098(02)00304-6 (Pubitemid 34946836)
28. M. J. Zheng, L. D. Zhang, G. H. Li, X. Y. Zhang, and X. F. Wang, Appl. Phys. Lett. APPLAB 0003-6951, 79, 839 (2001). 10.1063/1.1389071
29. U. Evans, P. E. Colavita, M. S. Doescher, M. Schiza, and M. L. Myrick, Nano Lett. NALEFD 1530-6984, 2, 641 (2002). 10.1021/nl025552p (Pubitemid 135706404)
30. S. Z. Chu, K. Wada, S. Inoue, and S. Todoroki, Electrochim. Acta ELCAAV 0013-4686, 48, 3147 (2003). 10.1016/S0013-4686(03)00344-X
31. T. R. B. Foong, A. Sellinger, and X. Hu, ACS Nano ANCAC3 1936-0851, 2, 2250 (2008). 10.1021/nn800435n
32. S. I. Cho, R. Xiao, and S. B. Lee, Nanotechnology NNOTER 0957-4484, 18, 405705 (2007). 10.1088/0957-4484/18/40/405705 (Pubitemid 47479673)
33. T. Shimizu, Z. Zhang, S. Shingubara, S. Senz, and U. Gosele, Nano Lett. NALEFD 1530-6984, 9, 1523 (2009). 10.1021/nl8035756
34. A. F. Feil, M. V. da Costa, L. Amaral, S. R. Teixeira, P. Migowski, J. Dupont, G. Machado, and S. B. Peripolli, J. Appl. Phys. JAPIAU 0021-8979, 107, 026103 (2010). 10.1063/1.3291115
35. Y. Kimura, H. Shiraki, K. Ishibashi, H. Ishii, K. Itaya, and M. Niwano, J. Electrochem. Soc. JESOAN 0013-4651, 153, C296 (2006). 10.1149/1.2180711
36. T. S. Kustandi, W. W. Loh, H. Gao, and H. Y. Low, ACS Nano ANCAC3 1936-0851, 4, 2561 (2010). 10.1021/nn1001744
37. F. Muller, A. D. Muller, S. Schulze, and M. Hietschold, J. Mater. Sci. JMTSAS 0022-2461, 39, 3199 (2004). 10.1023/B:JMSC.0000025858.30792.bf
38. A. Yin, M. Tzolov, D. Cardimona, T. Guo, and J. Xu, IET Circ. Dev. Syst., 1, 205 (2007). 10.1049/iet-cds:20060101 (Pubitemid 47152747)
39. S. Park, Y. H. Lee, J. C. Lee, and K. Kim, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 9, D31 (2006). 10.1149/1.2360018 (Pubitemid 44652654)
40. Y. Zhong, C. Xu, L. Kong, and H. Li, Appl. Surf. Sci. ASUSEE 0169-4332, 255, 3388 (2008). 10.1016/j.apsusc.2008.09.056
41. N. Tasaltn, S. Öztürk, N. Klņ, H. Yüzer, and Z. Z. Öztürk, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396, 95, 781 (2009). 10.1007/s00339-009-5071-z
42. S. H. Park, S. Kim, D. J. Lee, S. Yun, Z. G. Khim, and K. B. Kim, J. Electrochem. Soc. JESOAN 0013-4651, 156, K181 (2009). 10.1149/1.3207011
43. X. Zhao, U. Lee, S. Seo, and K. H. Lee, Mater. Sci. Eng. MSCEAA 0025-5416, 29, 1156 (2009). 10.1016/j.msec.2008.09.042
44. K. Kim, M. Kim, and S. Cho, Korean J. Chem. Eng. KJCHE6 0256-1115, 22, 789 (2005). 10.1007/BF02705800 (Pubitemid 43002559)
45. J. Kim, S. Khanal, M. Islam, A. Khatri, and D. Choi, Electrochem. Commun. ECCMF9 1388-2481, 10, 1688 (2008). 10.1016/j.elecom.2008.08.040
46. S. Y. Jeong, M. C. An, Y. S. Cho, D. J. Kim, M. C. Paek, and K. Y. Kang, Curr. Appl. Phys. ZZZZZZ 1567-1739, 9, S101 (2009). 10.1016/j.cap.2008.08.030
47. A. Li, F. Müller, A. Birner, K. Nielsch, and U. Gösele, Adv. Mater. ADVMEW 0935-9648, 11, 483 (1999). 10.1002/(SICI)1521-4095(199904)11: 6<483::AID-ADMA483>3.0.CO;2-I
48. J. E. Houser and K. R. Hebert, Phys. Status Solidi A PSSABA 0031-8965, 205, 2396 (2008). 10.1002/pssa.200779407
49. S. Z. Chu, K. Wada, S. Inoue, and S. Todoroki, J. Electrochem. Soc. JESOAN 0013-4651, 149, B321 (2002). 10.1149/1.1480017 (Pubitemid 34801932)
50. See supplementary material at http://dx.doi.org/10.1149/1.3506007 (E-JESOAN-158-018101) for additional information.
51. F. Nasirpouri, P. Southern, M. Ghorbani, A. Irajizad, and W. Schwarzacher, J. Magn. Magn. Mater. JMMMDC 0304-8853, 308, 35 (2007). 10.1016/j.jmmm.2006.04.035 (Pubitemid 44537576)
52. J. J. Hill, K. Haller, B. Gelfand, and K. J. Ziegler, ACS Appl. Mater. Interfaces, 2, 1992 (2010). 10.1021/am100290z
53. S. L. Pan, D. D. Zeng, H. L. Zhang, and H. L. Li, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396, 70, 637 (2000).