Transmission electron microscopy investigation of the interface formation between silicon and anodic alumina

Journal of Materials Science

Volumn 39, Issue 9, 2004, Pages 3199-3200

  Muller F ^a   Muller A D ^a   Schulze, S ^a   Hietschold, M ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; ATMOSPHERIC HUMIDITY; COPPER; CRYOSTATS; ELECTRIC POTENTIAL; IMAGING TECHNIQUES; OXIDATION; PLATES (STRUCTURAL COMPONENTS); POROUS MATERIALS; SEMICONDUCTOR DOPING; SILICON WAFERS; SURFACE ROUGHNESS; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY;

ANDERSON METHOD; CHARGE TRANSPORT; ENERGY SELECTED IMAGING (ESI); GATAN IMAGING FILTERS (GIF);

INTERFACES (MATERIALS);

EID: 3543141336     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSC.0000025858.30792.bf     Document Type: Article

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