Fabrication of La0.7Sr0.3MnO3-Si heterojunctions using a CMOS-compatible citric acid etch process

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 402-404

  Rajagopal, Rajashree ^a   Kale, S N ^b   Raorane, N A ^a   Pinto, R ^a   Rao, V Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b DEFENCE INSTITUTE OF ADVANCED TECHNOLOGY   (India)

Author keywords

Citric acid etch; magnetoelectronic devices; manganite heterojunctions; silicon technology

Indexed keywords

ACID ETCH; CMOS COMPATIBLE; ELECTRICAL PROPERTY; ENERGY DISPERSIVE X-RAY; ETCH PROCESS; LSMO FILMS; MAGNETOELECTRONIC DEVICES; P-N JUNCTION; PROFILOMETERS; QUANTUM INTERFEROMETRY; SILICON DIOXIDE; SILICON TECHNOLOGY; STANDARD CMOS TECHNOLOGY; STEP HEIGHT;

CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; FABRICATION; HETEROJUNCTIONS; MAGNETOELECTRONICS; MANGANESE OXIDE; PHOTORESISTS; POLYSILICON; SILICA; TECHNOLOGY;

CITRIC ACID;

EID: 79951944591     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2102331     Document Type: Article

References (19)

1. H. A. Ferreira, D. L. Graham, P. Parracho, V. Soares, and P. P. Freitas, "Flow velocity measurement in microchannels using magnetoresistive chips," IEEE Trans. Magn., vol. 40, no. 4, pp. 2652-2654, Jul. 2004.
2. R. E. Fontana, "Process complexity of magnetoresistive sensors," IEEE Trans. Magn., vol. 31, no. 6, pp. 2579-2584, Nov. 1995.
3. J. L. Brown, "High sensitivity magnetic field sensor using GMR materials with integrated electronics," in Proc. IEEE Int. Symp. Circuits Syst., 1995, vol. 3, pp. 1864-1867.
4. Y. M. Kang, A. N. Ulyanov, G.-M. Shin, S.-Y. Lee, D.-G. Yoo, and S.-I. Yoo, "Magnetotransport properties of c-axis oriented La0.7Sr0.3MnO3 thin films on MgO-buffered SiO2/Si substrates," J. Appl. Phys., vol. 105, no. 7, pp. 07D 711-1-07D 711-3, Apr. 2009.
5. P. Han, K. Jin, H. Lu, Q.-L. Zhuo, Y.-L. Zhuo, and G.-Z. Yang, "The mechanism study on transport properties in perovskite oxide p-n junctions," Appl. Phys. Lett., vol. 91, no. 18, pp. 182 102-1-182 102-3, Oct. 2007.
6. M. Al Ahmad, R. Plana, C. I. Cheon, and E.-J. Yun, "Modeling and characterization of smart LSMO ferromagnetic thin-film tunable resistance," IEEE Trans. Electron Devices, vol. 56, no. 4, pp. 665-671, Apr. 2009.
7. K. Lord, D. Hunter, T. M. Williams, and A. K. Pradhan, "Photocarrier injection effect and p-n junction characteristics of La0.7Sr0.3MnO3/ZnO and Si heterostructures," Appl. Phys. Lett., vol. 89, no. 5, pp. 052 116-1-052 116-3, Jul. 2006.
8. H.-B. Lu, K.-J. Jin, Y.-H. Huang, M. He, K. Zhao, B.-L. Cheng, Z.-H. Chen, Y.-L. Zhou, S.-Y. Dai, and G.-Z. Yang, "Picosecond photoelectric characteristic in La0.7Sr0.3MnO3/Si p-n junctions," Appl. Phys. Lett., vol. 86, no. 24, pp. 241 915-1-241 915-3, Jun. 2005.
9. K. X. Jin, S. G. Zhao, X. Y. Tan, and C. L. Chen, "Temperature dependence of photovoltaic effect in La0.7Sr0.3MnO3/Si heterostructure," Mater. Lett., vol. 62, no. 29, pp. 4452-4454, Nov. 2008.
10. F. Gaucher, A. Pautrat, S. Autier-Laurent, C. David, L. E. Calvet, P. Lecoeur, and A.-M. Haghiri-Gosnet, "Fabrication of metallic oxide nanowires," Microelectron. Eng., vol. 86, no. 4-6, pp. 820-823, Apr. 2009.
11. M. Darques, M. Koubaa, R. Soulimane, A.-M. Haghiri-Gosnet, P. Lecoeur,W. Prellier, and B. Mercey, "Optimized sub-40 nm planar patterning process for a La0.7Sr0.3MnO3 magnetic memory," J. Electroanal. Chem., vol. 584, no. 1, pp. 34-37, Oct. 2005. (Pubitemid 41360587)
12. M. Naoe, K. Hamaya, N. Fujiwara, T. Tanimaya, Y. Kitamoto, and Y. Yamazaki, "Selective dry etching of manganite thin films for high sensitive magnetoresistive sensors," J. Magn. Magn. Mater., vol. 235, no. 1-3, pp. 223-226, Oct. 2001. (Pubitemid 32934986)
13. J.-H. Kim, A. M. Grishin, and V. A. Ignatova, "Wet etching study of La0.67(Sr0.5Ca0.5)0.33MnO3 films on silicon substrates," J. Electron. Mater., vol. 37, no. 3, pp. 361-367, Mar. 2008.
14. K. R.Williams, K. Gupta, andM.Wasilik, "Etch rates for micromachining processing-Part II," J. Microelectromech. Syst., vol. 12, no. 6, pp. 761-778, Dec. 2003.
15. J. D. Plummer, M. D. Deal, and P. B. Griffin, "Modern CMOS technology," in Silicon VLSI Technology-Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice-Hall, 2000, ch. 2, pp. 49-90.
16. Material Safety Data Sheet for Citric Acid (anhydrous), CAS # 77-92-9. [Online]. Available: http://www.jtbaker.com/msds/englishhtml/ c4735.htm
17. Product Datasheet of Photoresist SPR 700. [Online]. Available: http://www.microresist.de/products/room-haas/pdf/Megaposit-SPR700-Serie.pdf
18. Product Datasheet of e-Beam Resist PMMA. [Online]. Available: http://www.microchem.com/products/pdf/PMMA-Data-Sheet.pdf
19. F. Demir, O. Lacin, and B. Donmez, "Leaching kinetics of calcined magnesite in citric acid solutions," Ind. Eng. Chem. Res., vol. 45, no. 4, pp. 1307-1311, Nov. 2006. (Pubitemid 43342586)