Fabrication of metallic oxide nanowires

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 820-823

  Gaucher, F ^a   Pautrat, A ^b   Autier Laurent, S ^a   David, C ^a   Calvet, L E ^a   Lecoeur, Ph ^a   Haghiri Gosnet, A M ^a  

^a CNRS   (France)

^b LABORATOIRE CRISMAT   (France)

Author keywords

Electron beam lithography; Half metal; Negative resist

Indexed keywords

ARGON ION BEAMS; ELECTRON-BEAM LITHOGRAPHIES; HALF-METAL; HALF-METALLIC; HIGH RESOLUTIONS; HYDROGEN-SILSESQUIOXANE; INORGANIC RESISTS; METALLIC OXIDES; NEGATIVE RESIST; NEGATIVE TONES;

ARGON; COMPUTER GENERATED HOLOGRAPHY; ELECTRIC WIRE; ELECTRON BEAMS; HYDROGEN; MANGANESE COMPOUNDS; METALLIC COMPOUNDS; METALS; NANOWIRES; NEGATIVE RESISTANCE; OXIDE MINERALS; THIN FILMS; TRANSPORT PROPERTIES;

ELECTRON BEAM LITHOGRAPHY;

EID: 67349247815     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.12.095     Document Type: Article

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