Photocarrier injection effect and p-n junction characteristics of la 0.7Sr 0.3MnO 3/ZnO and Si heterostructures

Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

  Lord, K ^a   Hunter, D ^a   Williams, T M ^a   Pradhan, A K ^a  

^a NORFOLK STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEHAVIOR; HOLE CONCENTRATION; P-N JUNCTION CHARACTERISTICS; PHOTOCARRIER INJECTION EFFECTS;

CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL GROWTH; ELECTRIC BREAKDOWN; HOLE MOBILITY; SEMICONDUCTING SILICON;

HETEROJUNCTIONS;

EID: 33748473654     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335406     Document Type: Article

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