State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7686, Issue , 2010, Pages

  Raring, James W ^a   Hall, Eric M ^a   Schmidt, Matthew C ^a   Poblenz, Christiane ^a   Li, Ben ^a   Pfister, Nick ^a   Kebort, Don ^a   Chang, Yu Chia ^a   Feezell, Daniel F ^a   Craig, Richard ^a   Speck, James S ^a   DenBaars, Steven P ^a   Nakamura, Shuji ^a  

^a Kaai Inc   (United States)

Author keywords

blue laser diodes; GaN; green laser diodes; Laser diodes; nonpolar GaN; semipolar GaN; violet laser diodes

Indexed keywords

BLUE LASER DIODES; GREEN LASER; LASER DIODES; NON-POLAR GAN; SEMIPOLAR; VIOLET LASER DIODES;

CRYSTAL ORIENTATION; DIODES; GALLIUM NITRIDE; PUMPING (LASER); SOLID STATE LASERS;

GALLIUM ALLOYS;

EID: 77953600244     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.849713     Document Type: Conference Paper

References (12)

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., "InGaN Based Multi-Quantum-Well- Structure Laser Diodes", Jpn. J. Appl. Phys 35, 74-76 (1996).
2. Miyoshi, T., Masui, S., Okada, T., Yanamoto, T., Kozaki, T., "510-515nm InGaN-Based Green Laser Diodes on c- Plane GaN Substrate," Appl. Phys. Express 2, 062201 (2009).
3. Yoshizumi, Y., Adachi, M., Enya, Y., Kyono, T., Tokuyama, S., Sumitomo, T., Akita, K., Ikegami, T., Ueno, M., Katayama, K., and Nakamura, T., "Continuous-Wave Operation of 520nm Green InGaN-Based Laser Diodes on Semi-Polar {20-21} GaN Substrates," Appl. Phys. Express 2, 092101 (2009).
4. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures," Appl. Phys. Lett. 69, 4188-4190 (1996). (Pubitemid 126619294)
5. Schmidt, M. C., Kim, K. C., Farrell. R. M., Feezell, D. F., Cohen, D. A., Saito, K., Fujito, K., Speck, J. S., DenBaars, S. P., and Nakamura, S., "Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes," Jpn. J. Appl. Phys. 46, No. 9, 190-191 (2007).
6. Okamoto, K., Ohta, H., Chichibu, S.F., Ichihara, J., and Takasu, H., "Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes," Jpn. J. Appl. Phys. 46, No. 9, 187-189 (2007).
7. Feezell, D. F., Schmidt, M. C., Farrell, R. M., Kim, K. C., Saito, M. C., Fujito, K., Cohen, D. A., Speck, J. S., DenBaars, S. P., and Nakamura, S., "AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes," Jpn. J. Appl. Phys. 46, No. 13, 284-286 (2007).
8. Okamoto, K., Tanaka, T., Kubota, M., and Ohta, H., "Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers," Jpn. J. Appl. Phys. 46, No. 35, 820-822 (2007).
9. Okamoto, K., Kashiwagi, J., Tanaka, T., and Kubota, M., "Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm," Appl. Phys. Lett. 94, 071105 (2009).
10. Tyagi, A., Lin, Y. D., Cohen, D. A., Saito, M., Fujito, K., Speck, J.S., DenBaars, S.P., and Nakamura, S., "Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11-22) InGaN Multiple Quantum Well Laser Diode Structures," Appl. Phys. Express 1, 091103 (2008).
11. Enya, Y., Yoshizumi, Y., Kyono, T., Akita, K., Ueno, M., Adachi, M., Sumitomo, T., Tokuyama, S., Ikegami, T., Katayama, K., and Nakamura, .T, "531nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20-21} Free-Standing GaN Substrates," Appl. Phys. Express 2, 082101 (2009).
12. Raring, J. W., Hall, E. M., Schmidt, M. C., Poblenz, C. P., Li, B., Pfister, N., Feezell, D. F., Craig, R., Speck, J. S., DenBaars, S. P., Nakamura, S., "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes," Proc. SPIE Vol. 7602, Gallium Nitride Materials and Devices V, edited by Jen-Inn Chyi Article CID Number 760218 (2010).