Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Conzatti, F ^a   Toniutti, P ^a   Esseni, D ^a   Palestri, P ^a   Selmi, L ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

INVERSION LAYER; MOSFETS; NANO-MOSFETS; NANOSCALE TRANSISTORS; ON-CURRENTS; OPTICAL PHONONS; P-MOSFETS; REMOTE COULOMB SCATTERINGS; REMOTE SURFACES; SCATTERING MECHANISMS; SEMI-CLASSICAL TRANSPORT MODELS; SIMULATION STUDIES; STRAIN CONDITIONS;

CRYSTAL ORIENTATION; ELECTRON DEVICES; GERMANIUM; MOSFET DEVICES; SCATTERING; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79951817711     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703366     Document Type: Conference Paper

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