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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 513-516

RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

PL EMISSIONS; RADIO FREQUENCY PLASMA ASSISTED MOLECULAR BEAM EPITAXY (RF-MBE); SEMICONDUCTING III-V MATERIALS; XRD SATELLITE PEAKS;

MOLECULAR BEAM EPITAXY;

EID: 33947366440 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.117 Document Type: Article

Times cited : (9)

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