Enhanced ferroelectric properties of Gd-substitution BiFeO3 thin films prepared by sol-gel process

Ferroelectrics

Volumn 410, Issue 1, 2011, Pages 96-101

  Wang, Xiuzhang ^a,b   Yan, Bowu ^c   Dai, Zhigao ^b   Liu, Meifeng ^b   Liu, Hongri ^a,b  

^a Hubei Key Laboratory of Pollutant Analysis and Reuse Technology   (China)

^b Hubei National University   (China)

^c HUBEI POLYTECHNIC UNIVERSITY   (China)

Author keywords

Bi1 xGdxFeO3 thin film; Ferroclectric properties; Sol gel processes; X ray methods

Indexed keywords

BI1-XGDXFEO3 THIN FILM; CURRENT BEHAVIORS; DC LEAKAGE CURRENT; FERROCLECTRIC PROPERTIES; FERROELECTRIC PROPERTY; MAXIMUM VALUES; REMNANT POLARIZATIONS; ROOM TEMPERATURE; SI SUBSTRATES; X-RAY METHODS;

FERROELECTRIC MATERIALS; FERROELECTRICITY; GADOLINIUM; GELS; IRON OXIDES; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; PHASE STABILITY; SOL-GELS; SOLS; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAYS;

SOL-GEL PROCESS;

EID: 79951753590     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2010.492728     Document Type: Conference Paper

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