Al and Ni co-doped ZnO films with room temperature ferromagnetism, low resistivity and high transparence

Materials Chemistry and Physics

Volumn 126, Issue 3, 2011, Pages 797-803

  Yu, Mingpeng ^a   Qiu, Hong ^a   Chen, Xiaobai ^b   Li, Hui ^a   Gong, Wei ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b BEIJING TECHNOLOGY AND BUSINESS UNIVERSITY   (China)

Author keywords

Ferromagnetism; Ni and Al co doped ZnO film; Resistivity; Transparence; Vacuum magnetic annealing

Indexed keywords

BAND CONDUCTION; C-AXIS ORIENTATIONS; CO-DOPED ZNO; COLUMNAR GRAIN; COSPUTTERING; FILM PLANES; GLASS SUBSTRATES; GROWING DIRECTION; IN-VACUUM; LOW RESISTIVITY; RESISTIVITY; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED; TRANSPARENCE; TRANSPORT MECHANISM; VARIABLE RANGE HOPPING; VISIBLE-WAVELENGTH RANGE; WURTZITE STRUCTURE; ZNO;

ALUMINUM; ANNEALING; FILM GROWTH; MAGNETIC FIELDS; METALLIC FILMS; SUBSTRATES; TRANSPARENCY; VACUUM; ZINC; ZINC OXIDE; ZINC SULFIDE;

FERROMAGNETISM;

EID: 79951675984     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.12.041     Document Type: Article

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