Structural and physical properties of Ni and Al co-doped ZnO films grown on glass by direct current magnetron co-sputtering

Physica B: Condensed Matter

Volumn 404, Issue 12-13, 2009, Pages 1829-1834

  Yu, Mingpeng ^a   Qiu, Hong ^a   Chen, Xiaobai ^b   Liu, Hongxi ^a   Wang, Mingwen ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b BEIJING TECHNOLOGY AND BUSINESS UNIVERSITY   (China)

Author keywords

Magnetization; Ni and Al co doped ZnO film; Resistivity; Structure; Transmittance

Indexed keywords

CO-SPUTTERING; COERCIVITY; COLUMNAR GRAINS; DIRECT-CURRENT MAGNETRONS; FREE-ELECTRON CONCENTRATIONS; GLASS SUBSTRATES; GROWING DIRECTIONS; HIGH DEPOSITION TEMPERATURES; NI AND AL CO-DOPED ZNO FILM; OPTICAL TRANSMITTANCES; RESISTIVITY; ROOM TEMPERATURE FERROMAGNETISMS; ROOM TEMPERATURES; SATURATION FIELDS; SEMICONDUCTING BEHAVIORS; SPUTTERING POWER; STRUCTURAL AND PHYSICAL PROPERTIES; STRUCTURE; TRANSMITTANCE; WAVELENGTH RANGES; WURTZITE STRUCTURES; ZNO;

ALUMINUM; FILM GROWTH; GALVANOMAGNETIC EFFECTS; GLASS; GRAIN GROWTH; HALL MOBILITY; MAGNETS; METALLIC FILMS; SATURATION MAGNETIZATION; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SODIUM COMPOUNDS; SUBSTRATES; ZINC; ZINC OXIDE; ZINC SULFIDE;

NICKEL;

EID: 67349095814     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.02.033     Document Type: Article

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