Magnetic, magnetoresistance and electrical transport properties of Ni and Al co-doped ZnO films grown on glass substrates by direct current magnetron co-sputtering

Materials Chemistry and Physics

Volumn 120, Issue 2-3, 2010, Pages 571-575

  Yu, Mingpeng ^a   Qiu, Hong ^a   Chen, Xiaobai ^b   Liu, Hongxi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b BEIJING TECHNOLOGY AND BUSINESS UNIVERSITY   (China)

Author keywords

Magnetization; Magnetoresistance; Ni and Al co doped ZnO film; Resistivity; Temperature dependence

Indexed keywords

BAND CONDUCTION; CHEMICAL VALENCE; CO-DOPED ZNO; COSPUTTERING; DIRECT-CURRENT MAGNETRONS; ELECTRICAL TRANSPORT PROPERTIES; GLASS SUBSTRATES; NI ATOMS; NI CLUSTERS; POSITIVE MR; RESISTIVITY; ROOM TEMPERATURE FERROMAGNETISM; ROOM TEMPERATURE MAGNETORESISTANCE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMALLY ACTIVATED; VARIABLE RANGE HOPPING; ZNO;

ALUMINUM; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FERROMAGNETISM; GLASS; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MAGNETOELECTRONICS; MAGNETORESISTANCE; METALLIC FILMS; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77649235292     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.12.007     Document Type: Article

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