Improvement of light output power in InGaN/GaN light-emitting diodes with a nanotextured GaN surface using indium tin oxide nanospheres

Japanese Journal of Applied Physics

Volumn 48, Issue 10 Part 1, 2009, Pages 1021041-1021044

  Kang, Ji Hye ^a   Kim, Hyung Gu ^a   Kim, Hyun Kyu ^a   Kim, Hee Yun ^a   Ryu, Jae Hyoung ^a   Uthirakumar, Periyayya ^a   Han, Nam ^a   Hong, Chang Hee ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING PROCESS; INDIUM TIN OXIDE; INGAN/GAN; INJECTION CURRENTS; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; MULTIPLE QUANTUM WELLS; NANO-TEXTURE; NANOTEXTURED; NANOTEXTURING; TEXTURED SURFACE; WEAK BINDING; WET-ETCHING PROCESS;

BINDING ENERGY; ELECTROMAGNETIC INDUCTION; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; INDIUM; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; NANOSPHERES; PHOTOLITHOGRAPHY; TIN; TITANIUM COMPOUNDS; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 77952740168     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.102104     Document Type: Article

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