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Volumn 13, Issue 2, 2010, Pages

Enhancement of light output power in InGaN/GaN LEDs with nanoroughed hemispherical indium tin oxide transparent ohmic contacts

Author keywords

[No Author keywords available]

Indexed keywords

AIR INTERFACE; HIGH SURFACE AREA; INDIUM TIN OXIDE; INGAN/GAN; INJECTION CURRENTS; ITO FILMS; LIGHT INCIDENT; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY;

EID: 74249111323     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3261741     Document Type: Article
Times cited : (15)

References (13)
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  • 7
    • 20844442604 scopus 로고    scopus 로고
    • GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
    • DOI 10.1063/1.1940723, 221101
    • R. H. Horng, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, and D. S. Wuu, Appl. Phys. Lett. 0003-6951, 86, 221101 (2005). 10.1063/1.1940723 (Pubitemid 40861565)
    • (2005) Applied Physics Letters , vol.86 , Issue.22 , pp. 1-3
    • Horng, R.H.1    Yang, C.C.2    Wu, J.Y.3    Huang, S.H.4    Lee, C.E.5    Wuu, D.S.6
  • 8
    • 34248594085 scopus 로고    scopus 로고
    • Enhancement of the light output of GaN-based light-emitting diodes with surface-patterned ITO electrodes by maskless wet-etching
    • DOI 10.1016/j.sse.2007.02.038, PII S0038110107001001
    • D. S. Leem, T. H. Lee, and T. Y. Seong, Solid-State Electron. 0038-1101, 51, 793 (2007). 10.1016/j.sse.2007.02.038 (Pubitemid 46764379)
    • (2007) Solid-State Electronics , vol.51 , Issue.5 , pp. 793-796
    • Leem, D.-S.1    Lee, T.2    Seong, T.-Y.3
  • 9
    • 33845449539 scopus 로고    scopus 로고
    • Improved light out-coupling in organic light emitting diodes employing ordered microlens arrays
    • DOI 10.1063/1.1435422
    • S. Möller and S. R. Forrest, J. Appl. Phys. 0021-8979, 91, 3324 (2002). 10.1063/1.1435422 (Pubitemid 34598820)
    • (2002) Journal of Applied Physics , vol.91 , Issue.5 , pp. 3324
    • Moller, S.1    Forrest, S.R.2
  • 10
    • 33750008657 scopus 로고    scopus 로고
    • Organic light emitting devices with enhanced outcoupling via microlenses fabricated by imprint lithography
    • DOI 10.1063/1.2356904
    • Y. Sun and S. R. Forrest, J. Appl. Phys. 0021-8979, 100, 073106 (2006). 10.1063/1.2356904 (Pubitemid 44570647)
    • (2006) Journal of Applied Physics , vol.100 , Issue.7 , pp. 073106
    • Sun, Y.1    Forrest, S.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.