Erratum: Impact of 〈 110 〉 uniaxial strain on n-channel In 0.15 Ga0.85 As high electron mobility transistors (Applied Physics Letters (2009) 95 (243504))

Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

  Xia, Ling ^a   Del Alamo, Jesús A ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955133728     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3460276     Document Type: Erratum

References (3)

1. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. JAPIAU 0021-8979 89, 5815 (2001). 10.1063/1.1368156
2. S. Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, New York, 1992). 10.1002/352760281X
3. Y. Liu, Z. L. Rang, A. K. Fung, C. Cai, P. P. Ruden, M. I. Nathan, and H. Shtrikman, Appl. Phys. Lett. APPLAB 0003-6951 79, 4586 (2001). 10.1063/1.1427753 (Pubitemid 34047770)