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Volumn 316, Issue 1, 2011, Pages 75-80

Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

(8) Huang, Yong a Ryou, Jae Hyun a Dupuis, Russell D a,b Pflgl, Christian c Capasso, Federico c Sun, Kewei d Fischer, Alec M d Ponce, Fernando A d

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

c HARVARD UNIVERSITY (United States)

d ARIZONA STATE UNIVERSITY (United States)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B2. Semiconducting IIIV materials; B3. Infrared devices; B3. Laser diodes

Indexed keywords

A1. CHARACTERIZATION; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B2. SEMICONDUCTING IIIV MATERIALS; B3. INFRARED DEVICES; B3. LASER DIODES;

INFRARED DEVICES; OXYGEN; QUANTUM CASCADE LASERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR DEPOSITION;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 79551685897 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.12.028 Document Type: Article

Times cited : (28)

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