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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 526-530

Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers

(7) Bour, D a Troccoli, M b Capasso, F b Corzine, S a Tandon, A a Mars, D a Hofler G a

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting iii v materials; B3. Heterojunction semiconductor devices; B3. Laser diodes

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; QUANTUM OPTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

ACTIVE REGIONS; HETEROJUNCTION SEMICONDUCTOR DEVICES; QUANTUM CASCADE LASER GROWTH; SEMICONDUCTING III-V MATERIALS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 9944248994 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.048 Document Type: Conference Paper

Times cited : (17)

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