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Volumn 310, Issue 23, 2008, Pages 5191-5197

OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III V materials; B3. Heterojunction semiconducting devices; B3. Laser diodes

Indexed keywords

CONTINUOUS WAVE LASERS; CONVERSION EFFICIENCY; CRYSTAL GROWTH; CRYSTALS; HETEROJUNCTIONS; LASERS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; ORGANOMETALLICS; QUANTUM CASCADE LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SURFACE STRUCTURE; THRESHOLD CURRENT DENSITY; VAPOR PHASE EPITAXY; VAPORS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

EID: 56249108686     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.100     Document Type: Article
Times cited : (21)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.