Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Journal of Crystal Growth

Volumn 312, Issue 9, 2010, Pages 1546-1550

  Young, Robert J ^a   Mereni, Lorenzo O ^a   Petkov, Nikolay ^a   Knight, Gabrielle R ^a   Dimastrodonato, Valeria ^a   Hurley, Paul K ^a   Hughes, Greg ^b   Pelucchi, Emanuele ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III V materials

Indexed keywords

B2. SEMICONDUCTING III-V MATERIALS; ELECTRON CONCENTRATION; GROWTH PARAMETERS; INGAAS/INALAS QUANTUM WELL; INP; INP SUBSTRATES; LATTICE-MATCHED; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; LOW-ANGLE MISORIENTATION; METAL-ORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL; SEMI CONDUCTING III-V MATERIALS; SPECTRAL PURITY; THICK LAYERS;

CRYSTAL GROWTH; ELECTRON MOBILITY; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77949912485     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.033     Document Type: Article

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