메뉴 건너뛰기




Volumn 312, Issue 8, 2010, Pages 1157-1164

Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials

Author keywords

A2. Metalorganic vapor phase epitaxy; A3. Quantum wells; A3. Semiconducting III V materials; B3. Heterojunction semiconducting devices; B3. Quantum cascade lasers

Indexed keywords

B3. HETEROJUNCTION SEMICONDUCTING DEVICES; HETEROJUNCTION SEMICONDUCTING DEVICES; METAL-ORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL; SEMI CONDUCTING III-V MATERIALS;

EID: 77949633866     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.005     Document Type: Article
Times cited : (19)

References (32)
  • 4
    • 47549114048 scopus 로고    scopus 로고
    • Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency
    • 021103-3
    • Bai Y., Slivken S., Darvish S.R., and Razeghi M. Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency. Applied Physics Letters 93 (2008) 021103-3
    • (2008) Applied Physics Letters , vol.93
    • Bai, Y.1    Slivken, S.2    Darvish, S.R.3    Razeghi, M.4
  • 5
    • 33846990099 scopus 로고    scopus 로고
    • Short-wavelength (λ∼3.05 μm) InP-based strain-compensated quantum-cascade laser
    • 051111-3
    • Semtsiv M.P., Wienold M., Dressler S., and Masselink W.T. Short-wavelength (λ∼3.05 μm) InP-based strain-compensated quantum-cascade laser. Applied Physics Letters 90 (2007) 051111-3
    • (2007) Applied Physics Letters , vol.90
    • Semtsiv, M.P.1    Wienold, M.2    Dressler, S.3    Masselink, W.T.4
  • 6
    • 63349091174 scopus 로고    scopus 로고
    • Terahertz quantum cascade lasers based on In0.53Ga0.47As/In0.52Al0.48As/InP
    • Fischer M., Scalari G., Walther C., and Faist J. Terahertz quantum cascade lasers based on In0.53Ga0.47As/In0.52Al0.48As/InP. Journal of Crystal Growth 311 (2009) 1939-1943
    • (2009) Journal of Crystal Growth , vol.311 , pp. 1939-1943
    • Fischer, M.1    Scalari, G.2    Walther, C.3    Faist, J.4
  • 7
  • 8
    • 34548040707 scopus 로고    scopus 로고
    • Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency
    • 071101-3
    • Evans A., Darvish S.R., Slivken S., Nguyen J., Bai Y., and Razeghi M. Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency. Applied Physics Letters 91 (2007) 071101-3
    • (2007) Applied Physics Letters , vol.91
    • Evans, A.1    Darvish, S.R.2    Slivken, S.3    Nguyen, J.4    Bai, Y.5    Razeghi, M.6
  • 9
    • 34249676911 scopus 로고    scopus 로고
    • Low threshold quantum-cascade lasers of room temperature continuous-wave operation grown by metal-organic chemical-vapor deposition
    • 211103-3
    • Wang X.J., Fan J.Y., Tanbun-Ek T., and Choa F.-S. Low threshold quantum-cascade lasers of room temperature continuous-wave operation grown by metal-organic chemical-vapor deposition. Applied Physics Letters 90 (2007) 211103-3
    • (2007) Applied Physics Letters , vol.90
    • Wang, X.J.1    Fan, J.Y.2    Tanbun-Ek, T.3    Choa, F.-S.4
  • 13
    • 0036610086 scopus 로고    scopus 로고
    • Bound-to-continuum and two-phonon resonance, quantum-cascade lasers for high duty cycle, high-temperature operation
    • Faist K., Hofstetter D., Beck M., Aellen T., Rochat M., and Blaser S. Bound-to-continuum and two-phonon resonance, quantum-cascade lasers for high duty cycle, high-temperature operation. IEEE Journal of Quantum Electronics 38 (2002) 533-546
    • (2002) IEEE Journal of Quantum Electronics , vol.38 , pp. 533-546
    • Faist, K.1    Hofstetter, D.2    Beck, M.3    Aellen, T.4    Rochat, M.5    Blaser, S.6
  • 14
    • 58149162647 scopus 로고    scopus 로고
    • High-performance continuous-wave operation of λ∼4.6 μm quantum-cascade lasers above room temperature
    • Yu J.S., Slivken S., Evans A.J., and Razeghi M. High-performance continuous-wave operation of λ∼4.6 μm quantum-cascade lasers above room temperature. IEEE Journal of Quantum Electronics 44 (2008) 747-754
    • (2008) IEEE Journal of Quantum Electronics , vol.44 , pp. 747-754
    • Yu, J.S.1    Slivken, S.2    Evans, A.J.3    Razeghi, M.4
  • 17
    • 9944248994 scopus 로고    scopus 로고
    • Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers
    • Bour D., Troccoli M., Capasso F., Corzine S., Tandon A., Mars D., and Hofler G. Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers. Journal of Crystal Growth 272 (2004) 526-530
    • (2004) Journal of Crystal Growth , vol.272 , pp. 526-530
    • Bour, D.1    Troccoli, M.2    Capasso, F.3    Corzine, S.4    Tandon, A.5    Mars, D.6    Hofler, G.7
  • 18
    • 33947319131 scopus 로고    scopus 로고
    • Key issues associated with low threshold current density for InP-based quantum cascade lasers
    • Li A.Z., Li H., Xu G.Y., Zhang Y.G., Lin C., Zhu C., Wei L., and Li Y.Y. Key issues associated with low threshold current density for InP-based quantum cascade lasers. Journal of Crystal Growth 301-302 (2007) 129-133
    • (2007) Journal of Crystal Growth , vol.301-302 , pp. 129-133
    • Li, A.Z.1    Li, H.2    Xu, G.Y.3    Zhang, Y.G.4    Lin, C.5    Zhu, C.6    Wei, L.7    Li, Y.Y.8
  • 20
    • 0028761970 scopus 로고
    • Investigation of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells
    • Tsuchiya T., Komori M., Tsuneta R., and Kakibayashi H. Investigation of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells. Journal of Crystal Growth 145 (1994) 371-375
    • (1994) Journal of Crystal Growth , vol.145 , pp. 371-375
    • Tsuchiya, T.1    Komori, M.2    Tsuneta, R.3    Kakibayashi, H.4
  • 21
    • 30244475226 scopus 로고
    • Optimization of growth conditions for strain compensated Ga[sub 0.32]In[sub 0.68]As/Ga[sub 0.61]In[sub 0.39]As multiple quantum wells
    • Smith A.D., Briggs A.T.R., Scarrott K., Zhou X., and Bangert U. Optimization of growth conditions for strain compensated Ga[sub 0.32]In[sub 0.68]As/Ga[sub 0.61]In[sub 0.39]As multiple quantum wells. Applied Physics Letters 65 (1994) 2311-2313
    • (1994) Applied Physics Letters , vol.65 , pp. 2311-2313
    • Smith, A.D.1    Briggs, A.T.R.2    Scarrott, K.3    Zhou, X.4    Bangert, U.5
  • 22
    • 0012812675 scopus 로고    scopus 로고
    • Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(0 0 1)
    • Desjardins P., Marchand H., Isnard L., and Masut R.A. Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(0 0 1). Journal of Applied Physics 81 (1997) 3501-3511
    • (1997) Journal of Applied Physics , vol.81 , pp. 3501-3511
    • Desjardins, P.1    Marchand, H.2    Isnard, L.3    Masut, R.A.4
  • 27
    • 33750014262 scopus 로고    scopus 로고
    • Low-threshold room-temperature operation of injectorless quantum-cascade lasers: influence of doping density
    • Friedrich A., Huber C., Boehm G., and Amann M.-C. Low-threshold room-temperature operation of injectorless quantum-cascade lasers: influence of doping density. Electronics Letters 42 (2006) 1228-1229
    • (2006) Electronics Letters , vol.42 , pp. 1228-1229
    • Friedrich, A.1    Huber, C.2    Boehm, G.3    Amann, M.-C.4
  • 28
    • 63349106361 scopus 로고    scopus 로고
    • Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers
    • Boehm G., Katz S., Meyer R., and Amann M.-C. Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers. Journal of Crystal Growth 311 (2009) 1932-1934
    • (2009) Journal of Crystal Growth , vol.311 , pp. 1932-1934
    • Boehm, G.1    Katz, S.2    Meyer, R.3    Amann, M.-C.4
  • 31
    • 7044239262 scopus 로고    scopus 로고
    • Continuous-wave operation of lambda∼4.8 mu m quantum-cascade lasers at room temperature
    • Evans A., Yu J.S., Slivken S., and Razeghi M. Continuous-wave operation of lambda∼4.8 mu m quantum-cascade lasers at room temperature. Applied Physics Letters 85 (2004) 2166-2168
    • (2004) Applied Physics Letters , vol.85 , pp. 2166-2168
    • Evans, A.1    Yu, J.S.2    Slivken, S.3    Razeghi, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.