Quantum cascade lasers grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4221-4223

  Roberts, J S ^a   Green, R P ^a   Wilson, L R ^a   Zibik, E A ^a   Revin, D G ^a,b   Cockbum, J W ^a   Airey, R J ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY;

QUANTUM CASCADE LASERS (QCL);

QUANTUM WELL LASERS;

EID: 0038450179     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1583858     Document Type: Article

References (11)

1. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, Science 264, 553 (1994).
2. S. Slivken, C. Jelen, A. Rybaltowski, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 71, 2593 (1997).
3. In fact, high performance InP-besed QCLs are often produced by using MBE for the active regions followed by separate MOVPE regrowth of high thermal conductivity InP upper cladding layers | see, for example, D. Hofstetter, M. Beck, T. Aellen, J. Faist, U. Oesterle, M. Ilegems, E. Gini, and H. Melchior, Appl. Phys. Lett. 78, 1964 (2001)]. The ability to grow an entire structure using MOVPE would greatly simplify this procedure.
4. R. P. Green, L. R. Wilson, D. A. Carder, J. W. Cockburn, M. Hopkinson, M. J. Steer, R. J. Airey, and G. Hill, Electron. Lett. 38, 1539 (2002).
5. J. S. Roberts, N. J. Mason, and M. Robinson, J. Cryst. Growth 68, 422 (1984).
6. C. Gmachl, D. L. Sivco, R. Colombelli, F. Capasso, and A. Y. Cho, Nature (London) 415, 883 (2002).
7. C. Sirtori, P. Kruck, S. Barbieri, P. Collot, J. Nagle, M. Beck, J. Faist, and U. Oesterle, Appl. Phys. Lett. 73, 3486 (1998).
8. M. Giehler, R. Hey, H. Kostial, S. Cronenberg, T. Ohtsuka, L. Schrottke, and H. T. Grahn, Appl. Phys. Lett. 82, 671 (2003).
9. C. Sirtori, P. Kruck, S. Barbieri, H. Page, J. Nagle, M. Beck, J. Faist, and U. Oesterle, Appl. Phys. Lett. 75, 3911 (1998).
10. H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, and C. Sirtori, Appl. Phys. Lett. 78, 3529 (2001).
11. We have very recently developed MOVPE-grown InGaAs/AlInAs QCLs on an InP substrate, whose performance is comparable to similar designs grown by MBE. Further details of these devices will be presented in a future publication.