High-performance quantum cascade lasers grown by metal-organic vapor phase epitaxy and their applications to trace gas sensing

Journal of Lightwave Technology

Volumn 26, Issue 21, 2008, Pages 3534-3555

  Troccoli, Mariano ^a,b   Diehl, Laurent ^c   Bour, David P ^d,e   Corzine, Scott W ^d,f   Yu, Nanfang ^c   Wang, Christine Y ^c   Belkin, Mikhail A ^c   Höfler, Gloria ^b,d   Lewicki, Rafal ^g   Wysocki, Gerard ^g   Tittel, Frank K ^g   Capasso, Federico ^c  

^a HARVARD UNIVERSITY   (United States)

^b Argos Tech LLC   (United States)

^c HARVARD UNIVERSITY   (United States)

^d AGILENT LABORATORIES   (United States)

^e Photodigm Inc   (United States)

^f INFINERA CORPORATION   (United States)

^g Rice University   (United States)

Author keywords

Infrared spectroscopy; Semiconductor device fabrication; Semiconductor lasers

Indexed keywords

APPLICATIONS; CONTINUOUS WAVE LASERS; CRYSTAL GROWTH; DC GENERATORS; DISTRIBUTED FEEDBACK LASERS; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; FABRICATION; GAS ABSORPTION; GAS DETECTORS; HETEROJUNCTIONS; INFRARED SPECTROSCOPY; LASERS; METALLORGANIC VAPOR PHASE EPITAXY; OXIDE MINERALS; PHOTOACOUSTIC SPECTROSCOPY; PULSED LASER APPLICATIONS; QUANTUM CASCADE LASERS; QUARTZ; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SENSORS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; TELECOMMUNICATION SYSTEMS; TRACE ELEMENTS;

ACTIVE REGIONS; BROAD BAND EMISSIONS; CHEMICAL SENSING; COHERENT PHENOMENON; CONTINUOUS WAVES; CONTINUOUS-WAVE OPERATIONS; DEVICE CHARACTERIZATIONS; DEVICE FABRICATIONS; DEVICE SIZES; DISTRIBUTED FEEDBACKS; DOPING DEPENDENCES; FLUID SENSING; GAS-SENSING; HIGH POWER EMISSIONS; HIGH POWER LEVELS; HIGH-TEMPERATURE OPERATIONS; LASER MATERIALS; LASER PERFORMANCE; LATERAL MODES; MATERIAL GROWTHS; METAL-ORGANIC VAPOR PHASE EPITAXIES; MOVPE; NEAR-FIELD MEASUREMENTS; ON CHIPS; PHOTOACOUSTIC ABSORPTIONS; PULSED OPERATIONS; QUANTUM CASCADES; QUANTUM DESIGNS; RELIABILITY DATUM; RIDGE LASERS; ROOM TEMPERATURES; SEMICONDUCTOR DEVICE FABRICATION; SPECTRAL CHARACTERISTICS; SPECTROSCOPIC APPLICATIONS; SPECTROSCOPIC TECHNIQUES; THERMAL DISSIPATIONS; TRACE-GAS SENSING; TUNABILITY;

ABSORPTION SPECTROSCOPY;

EID: 61349145790     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.925056     Document Type: Article

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