Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP

Applied Surface Science

Volumn 161, Issue 1, 2000, Pages 286-290

  Dumont, H ^a   Monteil, Y ^a   Bouix, J ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

PHOSPHINE; STEP BUNCHING; TERRACE STRUCTURE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0034228790     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00309-3     Document Type: Article

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