Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light-emitting diodes

Semiconductors

Volumn 44, Issue 6, 2010, Pages 828-834

  Kryzhanovskaya, N V ^a,b,c   Lundin, W V ^a,b   Nikolaev, A E ^a,b   Tsatsul'nikov, A F ^a,b   Sakharov, A V ^a,b   Pavlov, M M ^b   Cherkachin, N A ^d   Hytch M J ^c   Valkovsky, G A ^a   Yagovkina, M A ^a   Usov, S O ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Russian Academy of Sciences   (Russian Federation)

^c RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954148682     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782610060242     Document Type: Article

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