|
Volumn 310, Issue 23, 2008, Pages 4862-4866
|
Hydrogen effects in III-nitride MOVPE
|
Author keywords
A1. Computer simulation; A1. Etching; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides
|
Indexed keywords
ADATOMS;
COMPUTATIONAL METHODS;
CRYSTAL GROWTH;
ETCHING;
HYDROGEN;
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
A1. COMPUTER SIMULATION;
A1. ETCHING;
A3. METALORGANIC VAPOR PHASE EPITAXY;
A3. SELECTIVE EPITAXY;
B1. NITRIDES;
SURFACES;
|
EID: 56249110575
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.099 Document Type: Article |
Times cited : (48)
|
References (10)
|