Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

Semiconductors

Volumn 44, Issue 1, 2010, Pages 93-97

  Tsatsulnikov, A F ^a   Lundin, W V ^a   Sakharov, A V ^a   Zavarin, E E ^a   Usov, S O ^a   Nikolaev, A E ^a   Cherkashin, N A ^a,b   Ber, B Ya ^a   Kazantsev, D Yu ^a   Mizerov, M N ^a   Park, Hee Seok ^c   Hytch, M ^b   Hue, F ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b CNRS   (France)

^c Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 75649135865     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782610010161     Document Type: Article

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