MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 121-125

  Kunert, B ^a   Volz, K ^a   Koch, J ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A3. Organometallic vapor phase epitaxy; B1. Dilute nitrides; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

COMPOSITION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

DILUTE NITRIDES; MACROSCOPIC STRAIN; MULTI-QUANTUM WELL HETEROSTRUCTURES (MQWH); SEMICONDUCTOR GROWTH TEMPERATURE;

SEMICONDUCTOR GROWTH;

EID: 33846431276     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.013     Document Type: Article

References (13)

1. Pavesi L., DalNegro L., Mazzoleni C., Franzo G., and Priolo F. Nature 408 (2000) 440
2. Franzo G., Priolo F., Coffa S., Polman A., and Carnera A. Appl. Phys. Lett. 64 (1994) 2235
3. Ozda. O., and Jalali B. Opt. Express 12 (2004) 5269
4. Fang S.F., Adomi K., Iyer S., Morkoc H., Zabel H., Choi C., and Otsuka N. J. Appl. Phys. 68 7 (1990) R31
5. Yonezu H. Semicond. Sci. Technol. 17 (2002) 762
6. Kunert B., Reinhard S., Koch J., Lampalzer M., Volz K., and Stolz W. Phys. Stat. Sol. C 3 (2006) 614
7. Kunert B., Volz K., Koch J., and Stolz W. Appl. Phys. Lett. 88 (2006) 182108
8. Kunert B., Volz K., Nemeth I., and Stolz W. J. Lumin. 121 (2006) 361
9. Kunert B., Klehr A., Reinhard S., Volz K., and Stolz W. Electron. Lett. 42 (2006) 601
10. Smeets E.T.J.M. J. Crystal Growth 82 (1987) 385
11. Leys M.R., Titze H., and Samuelson L. J. Crystal Growth 93 (1988) 504
12. Lutgen S., Marschner T., Stolz W., Göbel E.O., and Tapfer L. J. Crystal Growth 152 (1995) 1
13. Ho I., and Stringfellow G.B. J. Crystal Growth 178 (1997) 1