Annealing experiments of the GaP based dilute nitride Ga(NAsP)

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 1, 2008, Pages 114-119

  Kuner, B ^a,b   Trusheim, D ^a   Vossebuvrger V ^a   Volz, K ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b NAsP III/V GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; PHOTOLUMINESCENCE PEAKS;

ANNEALING; CRYSTAL STRUCTURE; DILUTION; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 38849166745     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200777476     Document Type: Conference Paper

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