Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/GaP material system

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 98-102

  Oberhoff, S ^a   Kunert, B ^a   Torunski, T ^a   Volz, K ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A1. Atomic force microscopy; A1. Interfaces; A3. Metal organic vapour phase epitaxy; B2. Semiconducting III V materials; B3. Solid state lasers

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PARAMETER ESTIMATION; SOLID STATE LASERS;

CHEMICAL ETCHANTS; INTERIOR INTERFACE MORPHOLOGY; MATERIAL SYSTEMS; SEMICONDUCTING III-V MATERIALS;

GALLIUM COMPOUNDS;

EID: 33846428826     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.008     Document Type: Article

References (12)

1. Busch I., and Stümpel J. Appl. Surf. Sci. 212-213 (2003) 201
2. Ponomarev I.V., Deych L.I., and Lisyansky A.A. Phys. Rev. B 71 (2005) 155303
3. Ikarashi N., Tanaka M., Sakaki H., and Ishida K. Appl. Phys. Lett. 60 (1992) 1360
4. Feenstra R.M. Semicond. Sci. Technol. 9 (1994) 2157
5. Bernatz G., Nau S., Rettig R., Jänsch H., and Stolz W. J. Appl. Phys. 86 (1999) 12
6. Kunert B., Volz K., Koch J., and Stolz W. Appl. Phys. Lett. 88 (2006) 182108
7. Kunert B., Klehr A., Reinhard S., Volz K., and Stolz W. Electron. Lett. 42 (2006) 601
8. Yonezu H. Semicond. Sci. Technol. 17 (2002) 762
9. B. Kunert, K. Volz, J. Koch, W. Stolz, J. Crystal Growth, to be published.
10. Lee J.W., Pearton S.J., Abernathy C.R., Hobson W.S., Ren F., and Wu C.S. Solid State Electron. 38 (1995) 11
11. Lee J.W., Santana C.J., Abernathy C.R., and Pearton S.J. J. Electrochem. Soc. 143 (1996) L1
12. Volz K., Torunski T., and Stolz W. J. Appl. Phys. 97 (2005) 014306