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Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

(4) Kunert, B a Volz, K a Koch, J a,b Stolz, W a

a PHILIPPS UNIVERSITY MARBURG (Germany)

b Akzo Nobel GmbH Germany (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; GALLIUM NITRIDE; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

BAND GAP ENERGY; COMPRESSIVELY STRAINED GA(NASP); DILUTED III-V NITRIDES; HIGH-RESOLUTION X-RAY DIFFRACTION;

HETEROJUNCTIONS;

EID: 33646502194 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2200758 Document Type: Article

Times cited : (106)

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