SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 2, 2011, Pages

Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive column

(3) Lee, Hak Joo a,b Jeon, Hyeongtag b Lee, Wook Seong a

a Korea Institute of Science and Technology (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

4-IN. SI; ADDITIVE NITROGEN; BENEFICIAL EFFECTS; CATHODE MATERIALS; CHAMBER PRESSURE; DIRECT-CURRENT; DISCHARGE VOLTAGES; ELECTRON CURRENTS; ELECTRON KINETIC ENERGY; GAS CHEMISTRY; GRAIN SIZE; HIGH ELECTRIC FIELDS; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; IMPURITY INCORPORATION; INTERELECTRODE DISTANCE; INTERELECTRODES; MOLYBDENUM AND TUNGSTEN; NEAR EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPIES; PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; POSITIVE COLUMN; SUBSTRATE TEMPERATURE; TUNGSTEN CATHODES; ULTRANANOCRYSTALLINE DIAMOND FILMS; ULTRANANOCRYSTALLINE DIAMONDS;

ABSORPTION SPECTROSCOPY; CATHODES; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRIC DISCHARGES; ELECTRIC FIELDS; ELECTRON MICROSCOPES; ELECTRONS; ENERGY DISSIPATION; GASES; GRAIN REFINEMENT; GRAIN SIZE AND SHAPE; ION BOMBARDMENT; MOLYBDENUM; NITROGEN; PLASMA DEPOSITION; PLASMA STABILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY; X RAY DIFFRACTION;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79551665203 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3533764 Document Type: Article

Times cited : (9)

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