Multi-stacked InAs/GaNAs quantum dots with direct Si doping for use in intermediate band solar cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1834-1837

  Morioka, Takayuki ^a,b   Oshima, Ryuji ^a,b   Takata, Ayami ^a,b   Shoji, Yasushi ^b,c   Inoue, Tomoya ^d   Kita, Takashi ^d   Okada, Yoshitaka ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER COLLECTION; EMITTER LAYERS; GAAS; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; QUANTUM DOT; QUANTUM DOTS; SELF-ASSEMBLING; SHORTER WAVELENGTH; SI-DOPING; STAGE OF GROWTH;

PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DOPING; SILICON; SOLAR CELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78650125691     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5615944     Document Type: Conference Paper

References (8)

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