Multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1859-1862

  Shoji, Yasushi ^a,c   Oshima, Ryuji ^a,b   Takata, Ayami ^a,b   Morioka, Takayuki ^a,b   Okada, Yoshitaka ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; EXTERNAL QUANTUM EFFICIENCY; GAAS; GAAS(001); INGAAS-QD; QUANTUM DOT SOLAR CELLS; STRAIN-COMPENSATED; TOTAL DENSITY; WAVELENGTH RANGES;

FABRICATION; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR POWER GENERATION; SWITCHING CIRCUITS;

GALLIUM ALLOYS;

EID: 78650122751     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5615997     Document Type: Conference Paper

References (8)

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