Band bending, electronic affinity and density of states at several (100) surfaces of boron-doped homoepitaxial diamond thin films

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 1-7

  Muret, Pierre ^a   Saby, Christophe ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRONIC DENSITY OF STATES; ENERGY GAP; EPITAXIAL GROWTH; FERMI LEVEL; HYDROGENATION; LOW ENERGY ELECTRON DIFFRACTION; OXYGEN; SEMICONDUCTOR DOPING; SURFACE CLEANING; SURFACE TREATMENT; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND BENDING; ELECTRON AFFINITY;

DIAMOND FILMS;

EID: 0345866746     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/001     Document Type: Article

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