Ti2Al(O,N) formation by solid-state reaction between substoichiometric TiN thin films and Al2O3 (0001) substrates

Thin Solid Films

Volumn 519, Issue 8, 2011, Pages 2421-2425

  Persson, P O A ^a   Hoglund C ^a   Birch, J ^a   Hultman, L ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Electron energy loss spectroscopy; Electron microscopy; Energy dispersive X ray spectroscopy; Interfaces; Magnetron sputtering; MAX phases

Indexed keywords

ALN; ELASTIC RECOIL DETECTION ANALYSIS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GROWING FILMS; INTERFACES; MAX PHASIS; OXYNITRIDES; REACTIVE MAGNETRON SPUTTERING; STRUCTURAL METHODS; SUBSTRATE TEMPERATURE; TIN THIN FILMS;

ALUMINUM; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; MAGNETRON SPUTTERING; MEASUREMENT THEORY; NUCLEAR INSTRUMENTATION; PHASE INTERFACES; SOLID STATE REACTIONS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THIN FILMS; TITANIUM; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY; X RAYS; YTTERBIUM COMPOUNDS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79551495762     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.002     Document Type: Article

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