Thermodynamic stability of Al2O3 films in contact with Ti and Mo thin films

South African Journal of Science

Volumn 102, Issue 5-6, 2006, Pages 244-246

  Ndwandwe, O M ^a   Mpungose, M S ^a  

^a UNIVERSITY OF ZULULAND   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUND; CHEMICAL REACTION; MOLYBDENUM; THERMODYNAMICS; TITANIUM; X-RAY DIFFRACTION;

EID: 33751027482     PISSN: 00382353     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Buchanan D.A. et al. (1997). CMOS scaling into the nanometer regime. Proc. IEEE 85(4), 486-504.
2. 3 gate dielectrics with equivalent oxide thickness 5-10 Å. In Proc. VLSI Tech. Digest, ed. D.A. Buchanan, pp. 16-17, Honolulu.
3. Lim B.S., Rahtu A., Rouffignac P. and Gordon R.G. (2004). Atomic layer deposition of lanthanum oxide nano-laminates for electrical applications. Appl. Phys. Lett. 84, 3957-3959.
4. Doolittle L.R. (1985). Algorithms for rapid simulation of Rutherford backscattering spectra. Nucl. Instr. Meth. B 9, 344-351.
5. Kubaschewski O. and Alcock C.B. (1979). In Metallurgical Thermochemistry, p. 268. Pergamon Press, Oxford.
6. Weast R.C., Lide D.R., Astle M.J. and Beyer W.H. (1989). In CRC Handbook of Chemistry and Physics, p. 378. Wiley, London.