Interdiffusion at the Al2O3/Ti interface studied in thin-film structures

Surface and Interface Analysis

Volumn 26, Issue 11, 1998, Pages 861-867

  Zalar, A ^a   Baretzky, B ^b   Dettenwanger, F ^b   Ruhle M ^b   Panjan, P ^c  

^a Institute of Surface Engineering and Optoelectronics Ljubljana   (Slovenia)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

AES depth profiling; Al2O3 Ti interface; Interdiffusion; Interfacial reactions; Metal oxide thin film structures; XPS

Indexed keywords

ACTIVATION ENERGY; ALUMINA; AMORPHOUS FILMS; DIFFERENTIAL SCANNING CALORIMETRY; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); METALLIC FILMS; REACTION KINETICS; SOLID SOLUTIONS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILING;

SURFACE CHEMISTRY;

EID: 0032180644     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199810)26:11<861::AID-SIA443>3.0.CO;2-I     Document Type: Article

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