Demonstration of a room-temperature InP-based photodetector operating beyond 3 μm

IEEE Photonics Technology Letters

Volumn 23, Issue 4, 2011, Pages 218-220

  Chen, Baile ^a   Jiang, W Y ^a   Yuan, Jinrong ^a   Holmes Jr , Archie L ^a   Onat, Bora M ^b  

^a University of Virginia   (United States)

^b PRINCETON LIGHTWAVE INC   (United States)

Author keywords

Detectivity; GaAsSb; InGaAs; mid wavelength infrared (MWIR); photodiode; type II multiple quantum wells (MQWs)

Indexed keywords

DETECTIVITY; GAASSB; INGAAS; MID-WAVELENGTH INFRARED; TYPE-II MULTIPLE QUANTUM WELLS (MQWS);

INFRARED RADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; PHOTODIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79251639107     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2096205     Document Type: Article

References (15)

1. M. Zandian, J. D. Garnett, R. E. Dewames, M. Carmody, J. G. Pasko, M. Farris, C. A. Cabelli, D. E. Cooper, G. Hildebrandt, J. Chow, J. M. Arias, K. Vural, and D. N. B. Hall, "Mid-wavelength infrared p-on-n Hg Cd Te heterostructure detectors: 30-120Kelvin state-of-the-art performance," J. Electron. Mater., vol. 32, no. 7, pp. 803-809, 2003.
2. J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee, and J. M. Arias, "Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy," Appl. Phys. Lett., vol. 83, pp. 3701-3703, 2003.
3. P. Norton, "HgCdTe detectors," Opto-Electron. Rev., vol. 10, no. 3, pp. 159-174, 2002.
4. A. Rogalski, "HgCdTe infrared detector material: History, status and outlook," Rep. Prog. Phys., vol. 68, pp. 2267-2336, 2005.
5. A. Khoshakhlagh, S. Myers, H. Kim, E. Plis, N. Gautam, S. J. Lee, S. K. Noh, L. R. Dawson, and S. Krishna, "Long-wave InAs/GaSb superlattice detectors basedon nBn and pin designs," IEEE J. Quantum Electron., vol. 46, no. 6, pp. 959-964, Jun. 2010.
6. B. M. Onat, X. Jiang, and M. Itzler, "A systematic approach to dark current reduction in InGaAs-based photodiode arrays for shortwave infrared imaging," in Proc. IEEE-Photonics Society Conf., Antalya, Turkey, 2009, p. 231, Paper TuM1.
7. J. C. Dries, M. R. Gokhale, K. J. Thomson, and S. R. Forrest, "Strain compensated In12xGaxAs.x>0.47. quantum well photodiodes for extended wavelength operation," Appl. Phys. Lett., vol. 73, pp. 2263-2265.
8. C. Li, Y. Zhang, K. Wang, Y. Gua, H. Li, and Y. Li, "Distinction investigation of InGaAs photodetectors cutoff at 2.9μm," Infrared Phys. Technol., vol. 53, pp. 173-176, 2010.
9. R. Sidhu, N. Duan, J. C. Campbell, and A. L. Holmes, Jr., "A longwavelength photodiode on InP using latticematched GaInAs-GaAsSb type-II quantum wells," IEEE Photon. Technol. Lett., vol. 17, no. 12, pp. 2715-2717, Dec. 2005. (Pubitemid 41824598)
10. B. Chen, W. Y. Jiang, J. Yuan, and A. L. Holmes, Jr, Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes, to be published.
11. A. Rogalski, "Infrared detectors: Status and trends," Prog. Quantum Electron., vol. 27, pp. 59-210, 2003.
12. V. Gopal, E. Plis, J.-B. Rodriguez, C. E. Jones, L. Faraone, and S. Krishna, "Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes," J. Appl. Phys., vol. 104, p. 124506, 2008.
13. R. Sidhu, "Indium Phosphide Based Photodiodes for Mid-Wave Infrared Detection," Ph.D. dissertation, University of Texas at Austin, Austin, TX, 2005.
14. H. D. Vincent, Fundamentals of Infrared Detector Operation & Testing 1990.
15. J. B. Rodriguez, E. Plis, G. Bishop, Y. D. Sharma, H. Kim, L. R. Dawson, and S. Krishna, "nBn structure based on InAs/GaSb type-II strained layer superlattice," Appl. Phys. Lett., vol. 91, p. 043514, 2007.