Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Infrared Physics and Technology

Volumn 53, Issue 3, 2010, Pages 173-176

  Li, Cheng ^a,b   Zhang, Yonggang ^a,c   Wang, Kai ^a,b   Gu, Yi ^a   Li, Haosibaiyin ^a   Li, YaoYao ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

InGaAs photodetectors; Molecular beam epitaxy; Short wavelength infrared; Trap assisted tunneling current

Indexed keywords

CAP LAYERS; CUTOFF WAVELENGTHS; DOUBLE HETEROJUNCTIONS; INAS; INGAAS PHOTODETECTORS; PEAK DETECTIVITY; RESISTANCE-AREA PRODUCTS; ROOM TEMPERATURE; SHORT-WAVELENGTH INFRARED; TRAP ASSISTED TUNNELING;

CRYSTAL GROWTH; DETECTORS; ELECTRON TUNNELING; GALLIUM; GAS SOURCE MOLECULAR BEAM EPITAXY; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WIRES; TUNNELING (EXCAVATION); WIND TUNNELS;

MOLECULAR BEAMS;

EID: 77949914518     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2009.11.002     Document Type: Article

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