Long-wave InAs/GaSb superlattice detectors based on nBn and pin designs

IEEE Journal of Quantum Electronics

Volumn 46, Issue 6, 2010, Pages 959-964

  Khoshakhlagh, Arezou ^a   Myers, Stephen ^a   Kim, Hasul ^a   Plis, Elena ^a   Gautam, Nutan ^a   Lee, Sang Jun ^b   Noh, Sam Kyo ^b   Dawson, L Ralph ^a   Krishna, Sanjay ^a  

^a MSC01 1070   (United States)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

InAs GaSb type II superlattices; Infrared detectors; Longwave detector; NBn detector; Pin detector

Indexed keywords

INAS/GASB; INAS/GASB TYPE-II SUPERLATTICES; LONG WAVES; LONGWAVE DETECTOR; PIN DETECTOR; TYPE-II SUPERLATTICES; DARK CURRENT DENSITIES; INA/GASB TYPE-II SUPERLATTIX; INAS/GASB SUPERLATTICES; NBN DETECTOR; RESPONSIVITY;

DARK CURRENTS; DESIGN; ELECTRIC PROPERTIES; INFRARED DETECTORS; LEAKAGE CURRENTS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SUPERLATTICES; WAVES; ANTIMONY COMPOUNDS; CURRENT DENSITY; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INFRARED RADIATION;

DETECTORS; PHOTONS;

EID: 77949635099     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2041635     Document Type: Article

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