Mid-wavelength infrared p-on-n Hg1-xCdxTe heterostructure detectors: 30-120 Kelvin state-of-the-art performance

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 803-809

  Zandian, Majid ^a   Garnett, J D ^a   Dewames, R E ^a   Carmody, M ^a   Pasko, J G ^a   Farris, M ^a   Cabelli, C A ^a   Cooper, D E ^a   Hildebrandt, G ^a   Chow, J ^a   Arias, J M ^a   Vural, K ^a   Hall, Donald N B ^b  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF HAWAII   (United States)

Author keywords

CdZnTe substrate; HgCdTe; Mid wavelength infrared (MWIR) devices; Molecular beam epitaxy (MBE)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; HETEROJUNCTIONS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; SUBSTRATES;

MID-WAVELENGTH INFRARED (MWIR) DEVICES;

MERCURY COMPOUNDS;

EID: 0043269195     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0074-6     Document Type: Conference Paper

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