In-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films

Applied Surface Science

Volumn 257, Issue 7, 2011, Pages 2707-2711

  Bruijn, S ^a   Van De Kruijs, R W E ^a   Yakshin, A E ^a   Bijkerk, F ^a,b  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Diffusion; Interface; Molybdenum; Multilayers; Silicon; Thin films; X ray diffraction

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; FILM PREPARATION; MOLYBDENUM; MULTILAYERS; SILICON; TEMPERATURE; THICK FILMS; THIN FILMS; X RAY DIFFRACTION;

DIFFUSION CONSTANT; DIFFUSION LIMITED; DIFFUSION REACTION; IN-SITU X-RAY DIFFRACTION; LOW-TEMPERATURE DIFFUSION; MULTI-LAYERED FILMS; NANOMETER-THICK FILMS; TEMPERATURE SCALING;

INTERFACES (MATERIALS);

EID: 79251598377     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.10.049     Document Type: Article

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